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SI4511DY-T1-E3 Datasheet(PDF) 7 Page - Vishay Siliconix |
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SI4511DY-T1-E3 Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 12 page Document Number: 72223 S09-0867-Rev. E, 18-May-09 www.vishay.com 7 Vishay Siliconix Si4511DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 40 10 1 VSD - TJ = 150 °C TJ = 25 °C Source-to-Drain Voltage (V) - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 01 2 3 45 ID = 6.2 A GS - Gate-to-Source Voltage (V) V 0 15 30 5 10 Time (s) 25 1 100 600 10 10 -1 10 -2 20 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse P(t) = 10 DC 0.1 IDM Limited ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V DS > minimum VGS at which RDS(on) is specified P(t) = 0.01 P(t) = 0.001 |
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