SI4532CDY-T1-GE3 datasheet(8/15 Pages) VISHAY

Part #	SI4532CDY-T1-GE3

Description	N- and P-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 64805

S11-0652-Rev. B, 11-Apr-11

Vishay Siliconix

Si4532CDY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

VDS - Drain-to-Source Voltage (V)

VGS =5 V

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

VGS =10 V thru 6 V

VGS =4 V

VGS =3 V

ID - Drain Current (A)

0.00

0.05

0.10

0.15

0.20

0

3

6

9

12

15

VGS =10 V

VGS =4.5 V

ID =2.5 A

0

2

4

6

8

10

024

6

8

Qg - Total Gate Charge (nC)

VDS =22.5 V

VDS =7.5 V

VDS =15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

150

300

450

600

0

6

12

18

24

30

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V

VGS =4.5 V

ID =3.2 A

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