SI4511DY-T1-GE3 datasheet(2/12 Pages) VISHAY

Part #	SI4511DY-T1-GE3

Description	N- and P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72223

S09-0867-Rev. E, 18-May-09

Vishay Siliconix

Si4511DY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.8

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.4

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

N-Ch

± 100

nA

VDS = 0 V, VGS = ± 12 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

5

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 5

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

40

A

VDS = - 5 V, VGS = - 4.5 V

P-Ch

- 40

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 9.6 A

N-Ch

0.0115

0.0145

Ω

VGS = - 4.5 V, ID = - 6.2 A

P-Ch

0.022

0.033

VGS = 4.5 V, ID = 8.6 A

N-Ch

0.0135

0.017

VGS = - 2.5 V, ID = - 5 A

P-Ch

0.035

0.050

Forward Transconductanceb

gfs

VDS = 15 V, ID = 9.6 A

N-Ch

33

S

VDS = - 15 V, ID = - 6.2 A

P-Ch

17

Diode Forward Voltagb

VSD

IS = 1.7 A, VGS = 0 V

N-Ch

0.8

1.2

V

IS = - 1.7 A, VGS = 0 V

P-Ch

- 0.8

- 1.2

Dynamica

Total Gate Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 9.6 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A

N-Ch

11.5

18

nC

P-Ch

17

20

Gate-Source Charge

Qgs

N-Ch

3.7

P-Ch

4.1

Gate-Drain Charge

Qgd

N-Ch

3.3

P-Ch

4.3

Turn-On Delay Time

td(on)

N-Channel

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

P-Channel

VDD = - 10 V, RL = 10 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

N-Ch

12

20

ns

P-Ch

25

40

Rise Time

tr

N-Ch

12

20

P-Ch

30

45

Turn-Off Delay Time

td(off)

N-Ch

55

85

P-Ch

70

105

Fall Time

tf

N-Ch

15

25

P-Ch

50

75

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, dI/dt = 100 A/µs

N-Ch

50

100

IF = - 1.7 A, dI/dt = 100 A/µs

P-Ch

40

80

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