Document Number: 65922

S10-0455-Rev. B, 22-Feb-10

www.vishay.com

9

Vishay Siliconix

Si4564DY

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.0

0.2

0.6

1.0

0.4

0.8

1.2

0.01

1

0.1

10

100

V

T

T

- 0.4

- 50

- 25

25

75

125

0

50

100

150

- 0.1

0.2

0.5

0.8

T

I

I

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

02

6

48

9

15

37

10

0.08

0.06

0.04

0.02

0.10

T

T

I

0

0.001

0.01

0.1

1

10

10

20

30

40

50

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.01

0.1

1

100

10

0.1

1

10

100

V

* V

Limited by R

BVDSS Limited

T

Single Pulse

1 ms

10 ms

1 s

10 s

100 ms

DC