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SI4620DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4620DY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Vishay Siliconix Si4620DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 30 35 40 0 1234 5 VGS = 10 V thru 6 V 4 V VDS - Drain-to-Source Voltage (V) 5 V 3 V 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 35 40 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 246 8 10 ID = 6 A Qg - Total Gate Charge (nC) VDS = 15 V VDS = 24 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 25 °C 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6 A TJ - Junction Temperature (°C) |
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