SI4620DY-T1-E3 datasheet(4/13 Pages) VISHAY

Part #	SI4620DY-T1-E3

Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73862

S09-1341-Rev. D, 13-Jul-09

Vishay Siliconix

Si4620DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

35

40

0

1234

5

VGS = 10 V thru 6 V

4 V

VDS - Drain-to-Source Voltage (V)

5 V

3 V

0.00

0.02

0.04

0.06

0.08

0.10

0

5

10

15

20

25

30

35

40

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0

246

8

10

ID = 6 A

Qg - Total Gate Charge (nC)

VDS = 15 V

VDS = 24 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

0

100

200

300

400

500

600

700

800

0

5

10

15

20

25

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 6 A

TJ - Junction Temperature (°C)

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SI4620DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

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