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SI4712DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4712DY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4712DY New Product Document Number: 65170 S09-1814-Rev. A, 14-Sep-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power - Low Side PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) a Qg (Typ.) 30 0.013 at VGS = 10 V 14.6 8.3 nC 0.0165 at VGS = 4.5 V 12.9 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G S D Schottky Diode Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 14.6 A TC = 70 °C 11.6 TA = 25 °C 10.3b, c TA = 70 °C 8.2b, c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 4.5 TA = 25 °C 2.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 15 Single Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 5 W TC = 70 °C 3.2 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25 |
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