SI4712DY datasheet(1/10 Pages) VISHAY

Part #	SI4712DY

Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Vishay Siliconix

Si4712DY

New Product

Document Number: 65170

S09-1814-Rev. A, 14-Sep-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

SkyFET® Monolithic TrenchFET® Power

MOSFET and Schottky Diode

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook System Power

- Low Side

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

a

Qg (Typ.)

30

0.013 at VGS = 10 V

14.6

8.3 nC

0.0165 at VGS = 4.5 V

12.9

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

S

D

Schottky Diode

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

14.6

A

TC = 70 °C

11.6

TA = 25 °C

10.3b, c

TA = 70 °C

8.2b, c

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

4.5

TA = 25 °C

2.3b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

15

Single Pulse Avalanche Energy

EAS

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5

W

TC = 70 °C

3.2

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

38

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

20

25

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