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SI4714DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4714DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 67942 S11-1180-Rev. A, 13-Jun-11 Vishay Siliconix Si4714DY New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 1 mA 30 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID= 1 mA 12.3 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.017 0.150 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 110 On -State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0110 0.0135 VGS = 4.5 V, ID = 10 A 0.0145 0.0175 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 25 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 722 pF Output Capacitance Coss 194 Reverse Transfer Capacitance Crss 64 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 16.3 24.5 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 7.3 11 Gate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 2 Gate Resistance Rg f = 1 MHz 0.3 1.1 2.2 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 918 ns Rise Time tr 18 35 Turn-Off Delay Time td(off) 10 20 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 714 Rise Time tr 11 22 Turn-Off Delay Time td(off) 14 28 Fall Time tf 918 Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 3.8 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 1 A 0.42 0.53 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 14.5 29 ns Body Diode Reverse Recovery Charge Qrr 510 nC Reverse Recovery Fall Time ta 7.5 ns Reverse Recovery Rise Time tb 7 |
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