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SI4816BDY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4816BDY Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Vishay Siliconix Si4816BDY CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 1 2 3 4 5 6 0 2468 10 VDS = 15 V ID = 6.8 A Qg – Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 40 10 1 VSD – Source-to-Drain Voltage (V) TJ = 25 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6.8 A TJ – Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 VGS – Gate-to-Source Voltage (V) ID = 6.8 A 0.001 0 1 100 40 60 10 0.1 Time (s) 20 80 0.01 |
Similar Part No. - SI4816BDY_09 |
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