SI4816BDY_09 datasheet(4/13 Pages) VISHAY

Part #	SI4816BDY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 73026

S09-0394-Rev. D, 09-Mar-09

Vishay Siliconix

Si4816BDY

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

0

1

2

3

4

5

6

0

2468

10

VDS = 15 V

ID = 6.8 A

Qg – Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ = 150 °C

40

10

1

VSD – Source-to-Drain Voltage (V)

TJ = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ – Temperature (°C)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 6.8 A

TJ – Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0

2468

10

VGS – Gate-to-Source Voltage (V)

ID = 6.8 A

0.001

0

1

100

40

60

10

0.1

Time (s)

20

80

0.01

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