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SI4904DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4904DY-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 www.vishay.com 3 Vishay Siliconix Si4904DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 2 V 0 4 8 12 16 20 0.0 0.6 1.2 1.8 2.4 3.0 VGS = 10 thru 3 V VDS – Drain-to-Source Voltage (V) 04 8 12 16 20 VGS = 10 V ID – Drain Current (A) VGS = 4.5 V 0.020 0.018 0.016 0.014 0.012 0.010 0 2 4 6 8 10 0 12243648 60 Qg – Total Gate Charge (nC) ID = 5 A VDS = 10 V VDS = 20 V VDS = 30 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.6 1.2 1.8 2.4 3.0 25 °C TC = 125 °C - 55 °C VGS – Gate-to-Source Voltage (V) Ciss Coss Crss 0 700 1400 2100 2800 3500 0 8 16 24 32 40 VDS – Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) VGS = 10 V VGS = 4.5 V ID = 5 A |
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