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SI5456DU-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI5456DU-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page Vishay Siliconix Si5456DU www.vishay.com 2 Document Number: 64800 S09-0665-Rev. A, 20-Apr-09 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 21 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 4.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 9.3 A 0.008 0.010 Ω VGS = 4.5 V, ID = 8 A 0.011 0.0135 Forward Transconductancea gfs VDS = 15 V, ID = 9.3 A 25 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 1200 pF Output Capacitance Coss 350 Reverse Transfer Capacitance Crss 220 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 14 A 20 30 nC VDS = 10 V, VGS = 4.5 V, ID = 14 A 9.8 15 Gate-Source Charge Qgs 3.2 Gate-Drain Charge Qgd 3.2 Gate Resistance Rg f = 1 MHz 0.2 1.1 2.2 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 9.6 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 15 25 Turn-Off Delay Time td(off) 20 30 Fall Time tf 10 15 Turn-On Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 9.6 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 10 15 Turn-Off Delay Time td(off) 20 30 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 12 A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 9.6 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 9.6 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 7 |
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