Electronic Components Datasheet Search |
|
SI5908DC Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SI5908DC Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si5908DC SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.53 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 4.5 V 119 A VGS = 4.5 V, ID = 4.4 A 0.030 0.032 VGS = 2.5 V, ID = 4.1 A 0.033 0.036 Drain-Source On-State Resistance a rDS(on) VGS = 1.8 V, ID = 1.9 A 0.037 0.042 Ω Forward Transconductance a gfs VDS = 10 V, ID = 4.4 A 26 22 S Forward Voltage a VSD IS = 0.9 A, VGS = 0 V 0.71 0.80 V Dynamic b Total Gate Charge Qg 5.1 5 Gate-Source Charge Qgs 0.85 0.85 Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 4.4 A 1 1 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 73096 S-60073 Rev. B, 23-Jan-06 |
Similar Part No. - SI5908DC |
|
Similar Description - SI5908DC |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |