SI5908DC datasheet(2/4 Pages) VISHAY

Part #	SI5908DC

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si5908DC

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.53

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

119

A

VGS = 4.5 V, ID = 4.4 A

0.030

0.032

VGS = 2.5 V, ID = 4.1 A

0.033

0.036

Drain-Source On-State Resistance

a

rDS(on)

VGS = 1.8 V, ID = 1.9 A

0.037

0.042

Ω

Forward Transconductance

a

gfs

VDS = 10 V, ID = 4.4 A

26

22

S

Forward Voltage

a

VSD

IS = 0.9 A, VGS = 0 V

0.71

0.80

V

Dynamic

b

Total Gate Charge

Qg

5.1

5

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

VDS = 10 V, VGS = 4.5 V, ID = 4.4 A

1

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 73096

S-60073

Rev. B, 23-Jan-06

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