SI7288DP-T1-GE3 datasheet(3/13 Pages) VISHAY

Part #	SI7288DP-T1-GE3

Description	Dual N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65366

S09-2113-Rev. A, 12-Oct-09

www.vishay.com

3

Vishay Siliconix

Si7288DP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.010

0.013

0.016

0.019

0.022

0.025

0

10203040

50

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

0

2

4

6

8

10

0.0

2.1

4.2

6.3

8.4

10.5

VDS =30 V

VDS =20 V

ID =10A

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

150

300

450

600

750

0

8

16

24

32

40

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

ID =8A

VGS =10 V

VGS =4.5 V

TJ -Junction Temperature (°C)

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SI7288DP-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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