SI7411DN datasheet(2/4 Pages) VISHAY

Part #	SI7411DN

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si7411DN

www.vishay.com

Document Number: 72571

S-52517

Rev. B, 12-Dec-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −300 µA

0.82

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

372

A

VGS = −4.5 V, ID = −11.4 A

0.016

0.015

VGS = −2.5 V, ID = −9.9 A

0.022

0.020

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −2.9 A

0.031

0.027

Ω

Forward Transconductance

a

gfs

VDS = −15 V, ID = −11.4 A

38

35

S

Diode Forward Voltage

a

VSD

IS = −3 A, VGS = 0 V

−0.83

−0.80

V

Dynamic

b

Total Gate Charge

Qg

23

27

Gate-Source Charge

Qgs

3.9

Gate-Drain Charge

Qgd

VDS = −10 V, VGS = −4.5 V, ID = −11.4 A

7

nC

Turn-On Delay Time

td(on)

27

23

Rise Time

tr

23

45

Turn-Off Delay Time

td(off)

164

135

Fall Time

tf

VDD = −10 V, RL = 10 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

30

70

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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