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SI7411DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7411DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2 Vishay Siliconix SPICE Device Model Si7411DN www.vishay.com Document Number: 72571 S-52517 Rev. B, 12-Dec-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −300 µA 0.82 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −4.5 V 372 A VGS = −4.5 V, ID = −11.4 A 0.016 0.015 VGS = −2.5 V, ID = −9.9 A 0.022 0.020 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −2.9 A 0.031 0.027 Ω Forward Transconductance a gfs VDS = −15 V, ID = −11.4 A 38 35 S Diode Forward Voltage a VSD IS = −3 A, VGS = 0 V −0.83 −0.80 V Dynamic b Total Gate Charge Qg 23 27 Gate-Source Charge Qgs 3.9 3.9 Gate-Drain Charge Qgd VDS = −10 V, VGS = −4.5 V, ID = −11.4 A 7 7 nC Turn-On Delay Time td(on) 27 23 Rise Time tr 23 45 Turn-Off Delay Time td(off) 164 135 Fall Time tf VDD = −10 V, RL = 10 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω 30 70 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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