SI8472DB-T2-E1 datasheet(6/9 Pages) VISHAY

Part #	SI8472DB-T2-E1

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 63300

S11-1387-Rev. A, 11-Jul-11

Vishay Siliconix

Si8472DB

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Note:

When Mounted on 1" x 1" FR4 with Full Copper.

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1

2

3

4

5

0

25

50

75

100

125

150

T

A - Case Temperature (°C)

Power Derating

0.0

0.3

0.6

0.9

1.2

1.5

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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SI8472DB-T2-E1 Datasheet(PDF) 6 Page - Vishay Siliconix

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