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SI8472DB-T2-E1 Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI8472DB-T2-E1 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 9 page www.vishay.com 6 Document Number: 63300 S11-1387-Rev. A, 11-Jul-11 Vishay Siliconix Si8472DB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Note: When Mounted on 1" x 1" FR4 with Full Copper. * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 5 0 25 50 75 100 125 150 T A - Case Temperature (°C) Power Derating 0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 TA -Ambient Temperature (°C) |
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