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SI9105DJ02 Datasheet(PDF) 6 Page - Vishay Siliconix

Part # SI9105DJ02
Description  1-W High-Voltage Switchmode Regulator
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI9105DJ02 Datasheet(HTML) 6 Page - Vishay Siliconix

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Document Number: 70003
S-70497-Rev. I, 19-Mar-07
Vishay Siliconix
Si9105
DETAILED DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the Si9105
control circuitry, bias power can be supplied from the unreg-
ulated input power source, from an external regulated low-
voltage supply, or from an auxiliary "bootstrap" winding on
the output inductor or transformer.
When power is first applied during start-up, + VIN will draw a
constant current. The magnitude of this current is determined
by a high-voltage depletion MOSFET device which is con-
nected between + VIN and VCC. This start-up circuitry pro-
vides initial power to the IC by charging an external bypass
capacitance connected to the VCC pin. The constant current
is disabled when VCC exceeds 9.3 V. If VCC is not forced to
exceed the 9.3 V threshold, then VCC will be regulated to a
nominal value of 9.3 V by the pre-regulator circuit.
As the supply voltage rises toward the normal operating con-
ditions, an internal undervoltage (UV) lockout circuit keeps
the output MOSFET disabled until VCC exceeds the under-
voltage lockout threshold (typically 8.7 V). This guarantees
that the control logic will be functioning properly and that suf-
ficient gate drive voltage is available before the MOSFET
turns on. The design of the IC is such that the undervoltage
lockout threshold will not exceed the pre-regulator turn-off
voltage. Power dissipation can be minimized by providing an
external power source to VCC such that the constant current
source is always disabled.
BIAS
To properly set the bias for the Si9105, a 820 k
Ω resistor
should be tied from BIAS to - VIN. This determines the mag-
nitude of bias current in all of the analog sections and the
pull-up current for the SHUTDOWN and RESET pins. The
current flowing in the bias resistor is nominally 7.5 µA.
Reference Section
The reference section of the Si9105 consists of a tempera-
ture compensated buried zener and trimmable divider net-
work.
The output of the reference section is connected internally to
the non-inverting input of the error amplifier. Nominal refer-
ence output voltage is 4 V. The trimming procedure that is
used on the Si9105 brings the output of the error amplifier
(which is configured for unity gain during trimming) to within
± 1 % of 4 V. This automatically compensates for the input
offset voltage in the error amplifier.
The output impedance of the reference section has been
purposely made high so that a low impedance external volt-
age source can be used to override the internal voltage
source, if desired, without otherwise altering the perfor-
mance of the device.
Error Amplifier
Closed-loop regulation is provided by the error amplifier,
whose 1 k
Ω dynamic output impedance enables it to be used
with feedback compensation (unlike transconductance
amplifiers). A MOS differential input stage provides for low
input current. The noninverting input to the error amplifier
(VREF) is internally connected to the output of the reference
supply and should be bypassed with a small capacitor to
ground.
Oscillator Section
The oscillator consists of a ring of CMOS inverters, capaci-
tors, and a capacitor discharge switch. Frequency is set by
an external resistor between the OSC IN and OSC OUT pins.
(See Typical Characteristics graph of resistor value vs. fre-
quency.) The DISCHARGE pin should be tied to - VIN for nor-
mal internal oscillator operation. A frequency divider in the
logic section limits switch duty cycle to a maximum of 50 %
by locking the switching frequency to one half of the oscillator
frequency.
Remote synchronization can be accomplished by capacitive
coupling of a synchronization pulse into the OSC IN terminal.
For a 5 V pulse amplitude and 0.5 µs pulse width, typical val-
ues would be 100 pF in series with 3 k
Ω to OSC IN.


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