SIA519EDJ datasheet(10/14 Pages) VISHAY

Part #	SIA519EDJ

Description	N- and P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65176

S09-2685-Rev. B, 14-Dec-09

Vishay Siliconix

SiA519EDJ

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 µs

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

100 ms

1s,10s

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Current Derating*

0

2

4

6

8

10

0

255075

100

125

150

Package Limited

TC - Case Temperature (°C)

Power Derating

0

2

4

6

8

25

50

75

100

125

150

TC - Case Temperature (°C)

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