SIA910EDJ datasheet(3/7 Pages) VISHAY

Part #	SIA910EDJ

Description	Dual N-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65535

S09-2267-Rev. A, 02-Nov-09

www.vishay.com

3

Vishay Siliconix

SiA910EDJ

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

03

6

9

12

15

TJ =25 °C

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =5 V thru 2 V

VGS =1.5 V

VGS =1 V

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

0.00

0.02

0.04

0.06

0.08

0

5

10

15

20

VGS =4.5 V

VGS =2.5 V

VGS =1.8V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

VGS - Gate-to-Source Voltage (V)

10-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

0369

12

15

TJ = 150 °C

TJ = 25 °C

0

2

4

6

8

10

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

200

400

600

800

036

9

12

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

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