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ISO3080DWRG4 Datasheet(PDF) 11 Page - Texas Instruments |
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ISO3080DWRG4 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 20 page 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 T - Case Temperature - °C C V = V = 5.5 V CC1 CC2 ISO3080, ISO3086 ISO3082, ISO3088 www.ti.com SLOS581D – MAY 2008 – REVISED JANUARY 2011 THERMAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Low-K Thermal Resistance(1) 168 qJA Junction-to-Air °C/W High-K Thermal Resistance 96.1 qJB Junction-to-Board Thermal Resistance 61 °C/W qJC Junction-to-Case Thermal Resistance 48 °C/W VCC1 = VCC2 = 5.25 V, TJ = 150°C, CL = 15 pF, PD Device Power Dissipation 220 mW Input a 20 MHz 50% duty cycle square wave (1) Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages. Figure 15. DW-16 qJC Thermal Derating Curve per IEC 60747-5-2 Copyright © 2008–2011, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Link(s): ISO3080, ISO3086 ISO3082, ISO3088 |
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