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SIB488DK-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SIB488DK-T1-GE3
Description  N-Channel 12 V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIB488DK-T1-GE3 Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 65668
S10-1052-Rev. B, 03-May-10
www.vishay.com
5
Vishay Siliconix
SiB488DK
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0
255075
100
125
150
TC - CaseTemperature (°C)
Package Limited
Power Derating
0
3
6
9
12
15
25
50
75
100
125
150
TC - Case Temperature (°C)


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