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Document Number: 69062

S10-1367-Rev. D, 14-Jun-10

Vishay Siliconix

SiC417

Notes:

a. This device is ESD sensitive. Use of standard ESD handling precautions is required.

b. Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specififed in the Electrical Characteristicsw section is not recommended.

High-Side MOSFET

Low-Side MOSFET

PWM Controller and LDO Thermal Resistance

25

20

50

°C/W

Peak IR Reflow Temperature

-

260

°C

THERMAL RESISTANCE RATINGS

ELECTRICAL SPECIFICATIONS

Parameter

Symbol

Test Conditions Unless Specified

- 25 °C to + 85 °C for min. and max.,

Min.

Typ.

Max.

Unit

Input Supplies

328

V

V5V Voltage

V5V

4.5

5.5

a

Sensed at ENL pin, rising edge

2.4

2.6

2.95

Sensed at ENL pin, falling edge

2.235

2.4

2.565

EN/PSV = High

0.2

V5V UVLO Threshold Voltage

Measured at V5V pin, rising edge

3.7

3.9

4.1

Measured at V5V pin, falling edge

3.5

3.6

3.75

V5V UVLO Hysteresis

0.3

8.5

20

µA

Standby mode:

ENL = V5V, EN/PSV = 0 V

130

V5V Supply Current

EN/PSV, ENL = 0 V

3

7

b

2

mA

b

10

Controller

0.495

0.5

0.505

V

Frequency Range

continuous mode

200

1000

kHz

Bootstrap Switch Resistance

10

Ω

Timing

On-Time

999

1110

1220

ns

50

250

Soft Start

0.85

ms

Analog Inputs/Outputs

500

k

Ω

Current Sense

Zero-Crossing Detector Threshold Voltage

- 3

0

+ 3

mV

Power Good

Power Good Threshold Voltage

Internal reference 500 mV

- 10 %

+ 20 %

V

Start-Up Delay Time

2

ms

5

µs

Power Good Leakage Current

1

µA

Power Good On-Resistance

10

Ω