SIE844DF-T1-E3 datasheet(3/10 Pages) VISHAY

Part #	SIE844DF-T1-E3

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69988

S09-1338-Rev. B, 13-Jul-09

www.vishay.com

3

Vishay Siliconix

SiE844DF

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

60

0.0

0.4

0.8

1.2

1.6

2.0

VDS - Drain-to-Source Voltage (V)

VGS =10 V thru 4 V

VGS =2 V

VGS =3 V

0.004

0.005

0.006

0.007

0.008

0.009

0.010

0

102030

405060

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

06

12

18

24

30

Qg - Total Gate Charge (nC)

VDS = 24 V

VDS =15 V

ID = 12.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

500

1000

1500

2000

2500

0

5

10

15

20

25

30

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V,4.5 V,ID = 12.1 A

Similar Part No. - SIE844DF-T1-E3

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SIE844DF-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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