SIE848DF-T1-E3 datasheet(1/10 Pages) VISHAY

Part #	SIE848DF-T1-E3

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiE848DF

New Product

Document Number: 68821

S09-1338-Rev. B, 13-Jul-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Gen III Power MOSFET

•

Ultra Low Thermal Resistance Using Top-

Exposed PolarPAK® Package for Double-

Sided Cooling

•

Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

•

Low Qgd/Qgs Ratio Helps Prevent Shoot-Through

•

100 % Rg and UIS Tested

•

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•VRM

•

DC/DC Conversion: Low-Side

•

Synchronous Rectification

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

e

ID (A)

a

Qg (Typ.)

Silicon

Limit

Package

Limit

30

0.0016 at VGS = 10 V

211

60

43 nC

0.0022 at VGS = 4.5 V

180

60

Package Drawing

www.vishay.com/doc?72945

Ordering Information: SiE848DF-T1-E3 (Lead (Pb)-free)

SiE848DF-T1-GE3 (Lead (Pb)-free and Halogen-free)

Top View

Bottom View

Top surface is connected to pins 1, 5, 6, and 10

PolarPAK

10

D

S

G

D

S

G

D

1

43

2

5

67

8

9

D

DS

G

D

5

4

3

2

1

6

7

8

9

10

For Related Documents

www.vishay.com/ppg?68821

N-Channel MOSFET

G

D

S

Notes:

a. Package limited is 60 A.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile

(www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

211 (Silicon Limit)

A

60a (Package Limit)

TC = 70 °C

60a

TA = 25 °C

43b, c

TA = 70 °C

34b, c

Pulsed Drain Current

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a

TA = 25 °C

4.3b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

50

Avalanche Energy

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

PD

125

W

TC = 70 °C

80

TA = 25 °C

5.2b, c

TA = 70 °C

3.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

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