SIR422DP datasheet(5/13 Pages) VISHAY

Part #	SIR422DP

Description	N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 13 page

Document Number: 65025

S09-1336-Rev. A, 13-Jul-09

www.vishay.com

5

Vishay Siliconix

SiR422DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

12

24

36

48

60

0

255075

100

125

150

Package Limited

TC - Case Temperature (°C)

Power, Junction-to-Case

0

9

18

27

36

45

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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SIR422DP Datasheet(PDF) 5 Page - Vishay Siliconix

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