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KLTFTN2K2600 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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KLTFTN2K2600 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page SHD00604CEK This product complies with the RoHS Directive (EU 2002/95/EC). Publication date: December 2008 1 Light Emitting Diodes LNJ826W86RA Surface Mounting Chip LED UTSS Type Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 55 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA Reverse voltage VR 4 V Operating ambient temperature Topr –30 to +85 ° C Storage temperature Tstg –40 to +100 ° C Note) *: The conditon of IFP is duty 10%, pulse width 10 ms. Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Luminous intensity IO IF = 10 mA 13.5 16.9 mcd Reverse current IR VR = 4 V 100 µA Forward voltage VF IF = 10 mA 1.92 2.50 V Peak emission wavelength λP IF = 10 mA 610 nm Dominant emission wavelength λd IF = 10 mA 600 605 610 nm Spectral half band width Δλ IF = 10 mA 15 nm Note) Be careful of the product destruction by static electricity. 0 0 0 5 10 15 20 25 20 40 60 80 100 0 1.6 1.8 2.0 2.2 2.4 − 20 20 40 60 80 100 10 1 3 5 10 1 5 50 10 100 30 50 100 30 50 100 300 500 1000 20 20 40 40 60 60 80 80 100 100 0 20 40 60 80 100 600 550 650 700 1 3 5 10 30 50 100 0° 10° 10° 20° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 80° 60° 40° 20° 90° 90° IO IF IF VF IF Ta Directive characteristics Relative luminous intensity (%) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Relative luminous intensity Ta Relative luminous intensity λP Peak emission wavelength λP (nm) Lighting Color Soft Orange |
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