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SIR494DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR494DP Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 13 page  Document Number: 64824 S09-0874-Rev. A, 18-May-09 www.vishay.com 3 Vishay Siliconix SiR494DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.0008 0.0010 0.0012 0.0014 0.0016 0.0018 0 163248 64 80 VGS = 10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 021 42 63 84 105 ID =20A VDS =9 V VDS =6 V VDS =3 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1 234 5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 1700 3400 5100 6800 8500 0246 8 10 12 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID =20A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) |
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