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SIR808DP Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SIR808DP
Description  N-Channel 25 V (D-S) MOSFET
Download  13 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIR808DP Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 67515
S11-0614-Rev. A, 04-Apr-11
www.vishay.com
5
Vishay Siliconix
SiR808DP
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power Derating, Junction-to-Case
0
10
20
30
40
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)


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