SIR826DP datasheet(5/13 Pages) VISHAY

Part #	SIR826DP

Description	N-Channel 80 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 13 page

Document Number: 67196

S10-2761-Rev. A, 29-Nov-10

www.vishay.com

5

Vishay Siliconix

SiR826DP

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

24

48

72

96

120

0

255075

100

125

150

Package Limited

T

C - Case Temperature (°C)

Power, Junction-to-Case

0

25

50

75

100

125

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.6

1.2

1.8

2.4

3.0

0

25

50

75

100

125

150

T

A - Ambient Temperature (°C)

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SIR826DP Datasheet(PDF) 5 Page - Vishay Siliconix

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