SIS438DN-T1-GE3 datasheet(2/13 Pages) VISHAY

Part #	SIS438DN-T1-GE3

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 64826

S09-0876-Rev. A, 18-May-09

Vishay Siliconix

SiS438DN

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

20

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

22

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 5.0

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

1.0

2.3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 10 A

0.0079

0.0095

Ω

VGS = 4.5 V, ID = 7 A

0.0102

0.0125

Forward Transconductancea

gfs

VDS = 10 V, ID = 10 A

26

S

Dynamicb

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

880

pF

Output Capacitance

Coss

310

Reverse Transfer Capacitance

Crss

125

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 10 A

15

23

nC

VDS = 15 V, VGS = 4.5 V, ID = 10 A

7.3

11

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

2.1

Gate Resistance

Rg

f = 1 MHz

0.2

0.9

1.8

Ω

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 2 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

15

30

ns

Rise Time

tr

11

22

Turn-Off Delay Time

td(off)

16

30

Fall Time

tf

816

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 2 Ω

ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω

10

20

Rise Time

tr

816

Turn-Off Delay Time

td(off)

16

30

Fall Time

tf

714

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

16

A

Pulse Diode Forward Current

ISM

32

Body Diode Voltage

VSD

IS = 3 A, VGS = 0 V

0.77

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

14

28

ns

Body Diode Reverse Recovery Charge

Qrr

4.5

9

nC

Reverse Recovery Fall Time

ta

5.5

ns

Reverse Recovery Rise Time

tb

8.5

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