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SUP50N03-5M1P Datasheet(PDF) 5 Page - Vishay Siliconix |
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SUP50N03-5M1P Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Vishay Siliconix SUP50N03-5m1P Document Number: 66570 S10-1050-Rev. A, 03-May-10 www.vishay.com 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66570. Single Pulse Avalanche Current Capability vs. Time Time (s) 100 10 1 10-3 10-2 10-1 10-4 10-6 TJ 10-5 TJ = 25 °C = 150 °C Safe Operating Area 0.01 0.1 1 10 100 1000 0.1 1 10 100 TC = 25 °C Single Pulse BVDSS Limited Limited by RDS(on)* 100 μA 1ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified 10 ms 1 s, 10 s, DC 100 ms Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1 0.1 0.05 Single Pulse 0.02 |
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