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ST1000C18K1L Datasheet(PDF) 2 Page - Vishay Siliconix |
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ST1000C18K1L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93714 2 Revision: 02-Feb-11 ST1000C..K Series Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1473 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave Double side (single side) cooled 1473 (630) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 6540 A Maximum peak, one-cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 20.0 kA t = 8.3 ms 21.2 t = 10 ms 100 % VRRM reapplied 17.0 t = 8.3 ms 18.1 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 2000 kA2s t = 8.3 ms 1865 t = 10 ms 100 % VRRM reapplied 1445 t = 8.3 ms 1360 Maximum I2 t for fusing I2 t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA2 s Low level value of threshold voltage VT(TO)1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.950 V High level value of threshold voltage VT(TO)2 (I > x I T(AV)), TJ = TJ maximum 1.024 Low level value of on-state slope resistance rt1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.283 m High level value of on-state slope resistance rt2 (I > x I T(AV)), TJ = TJ maximum 0.265 Maximum on-state voltage drop VTM Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 , t r 1 μs TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 μs Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 300 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA |
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