Q62702-C825 datasheet(2/4 Pages) SIEMENS

Part #	Q62702-C825

Description	NPN Silicon Darlington Transistor (High current gain High collector current)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BC 517

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

IC = 10 mA

V(BR)CE0

30

–

Collector-base breakdown voltage

IC = 100

µA

V(BR)CB0

40

–

DC current gain

IC = 20 mA; VCE = 2 V1)

hFE

30 000 –

–

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

–

150

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

AC characteristics

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

10

–

nA

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

100

10

nA

Emitter cutoff current

VEB = 4 V

IEB0

–

100

V

Collector-emitter saturation voltage1)

IC = 100 mA; IB = 0.1 mA

VCEsat

––1

Base-emitter voltage1)

IC = 10 mA; VCE = 5 V

VBE

–

1.4

pF

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–

3.5

–

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

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Q62702-C825 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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