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TSHF4410 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSHF4410 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81276 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.1, 16-Sep-08 171 High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero TSHF4410 Vishay Semiconductors DESCRIPTION TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λ p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8636 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHF4410 40 ± 22 890 30 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF4410 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 180 mW Junction temperature Tj 100 °C |
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