Document Number: 81887

www.vishay.com

Rev. 1.1, 25-Jun-09

1

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

TSHG5510

Vishay Semiconductors

DESCRIPTION

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm):

∅ 5

• Leads with stand-off

• Peak wavelength:

λ

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 38°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching to Si photodetectors

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared radiation source for operation with CMOS

cameras (illumination)

• High speed IR data transmission

Note

Test conditions see table “Basic Characteristics“

Note

MOQ: minimum order quantity

Note

21061

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHG5510

32

± 38

830

15

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHG5510

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1A

Power dissipation

180

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm soldered on PCB

230

K/W