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UG30DPT Datasheet(PDF) 1 Page - Vishay Siliconix |
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UG30DPT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page UG30APT thru UG30DPT Vishay General Semiconductor Document Number: 88762 Revision: 05-Jun-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 50 V to 200 V IFSM 300 A trr 25 ns VF 0.85 V TJ max. 150 °C PIN 1 PIN 3 CASE PIN 2 TO-247AD (TO-3P) 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 120 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Operating and storage temperature range TJ, TSTG - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT Maximum instantaneous forward voltage per diode 15 A 30 A 10 A TJ = 100 °C VF 1.0 1.15 0.85 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 100 °C IR 15 800 µA |
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