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UH4PDC-M3-87A Datasheet(PDF) 1 Page - Vishay Siliconix |
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UH4PDC-M3-87A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 88991 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 10-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Ultrafast Rectifiers UH4PBC, UH4PCC, UH4PCD Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer computer, automotive, and telecommunication applications. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Low forward voltage drop, low power loss • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 2.0 A VRRM 100 V, 150 V, 200 V IFSM 40 A trr 25 ns VF at IF = 2.0 A 0.77 V TJ max. 175 °C TO-277A (SMPC) K 2 1 Anode 1 Anode 2 Cathode K eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UH4PBC UH4PCC UH4PCD UNIT Device marking code H4BC H4CC H4DC Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum average forward rectified current (fig. 1) total devive IF(AV) 4.0 A per diode 2.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 40 A Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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