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UH8JT-E3-45 Datasheet(PDF) 1 Page - Vishay Siliconix |
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UH8JT-E3-45 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product UH8JT & UHF8JT Vishay General Semiconductor Document Number: 88956 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High Voltage Ultrafast Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high voltage continuous mode power factor correctors (CCM PFC), switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. MECHANICAL DATA Case: TO-220AC, ITO-220AC Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 8 A VRRM 600 V IFSM 80 A trr 25 ns VF at IF = 8 A 1.47 V TJ max. 175 °C TO-220AC 1 2 PIN 1 PIN 2 CASE UH8JT ITO-220AC PIN 1 PIN 2 UHF8JT 1 2 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UH8JT UHF8JT UNIT Maximum repetitive peak reverse voltage VRRM 600 V Maximum average forward rectified current (Fig. 1) IF(AV) 8A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 80 A Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage (1) IF = 4 A IF = 8 A TA = 25 °C VF 1.82 2.30 - 3.0 V IF = 4 A IF = 8 A TA = 125 °C 1.20 1.47 - 1.8 |
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