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V10P10HM3-87A Datasheet(PDF) 1 Page - Vishay Siliconix |
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V10P10HM3-87A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89006 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 25-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A V10P10 Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 180 A EAS 100 mJ VF at IF = 10 A 0.574 V TJ max. 150 °C K 2 1 TO-277A (SMPC) TMBS ® eSMP ® Series Anode 1 Anode 2 Cathode K MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10P10 UNIT Device marking code V1010 Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 180 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 100 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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