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V20200G-E3-4W Datasheet(PDF) 3 Page - Vishay Siliconix |
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V20200G-E3-4W Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Document Number: 89117 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode T A = 150 °C T A = 125 °C T A = 25 °C T A = 100 °C Instantaneous Forward Voltage (V) 100 0.1 0 0.6 1.6 0.2 0.8 1 0.4 1.0 10 1.4 1.2 T A = 150 °C T A = 125 °C T A = 25 °C T A = 100 °C Percent of Rated Peak Reverse Voltage (%) 100 0.0001 10 40 100 20 50 1 30 60 10 90 70 0.1 0.01 0.001 80 Reverse Voltage (V) 10 000 10 0.1 100 1 100 10 1000 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Figure 6. Typical Transient Thermal Impedance Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode V(B,I)20200G t - Pulse Duration (s) 10 1 0.01 100 110 0.1 Junction to Case VF20200G t - Pulse Duration (s) 10 1 0.01 100 110 0.1 Junction to Case |
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