Q62702-C314-V3 datasheet(3/6 Pages) SIEMENS

Part #	Q62702-C314-V3

Description	NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

3

BC 337

BC 338

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

–

DC current gain1)

IC = 100 mA; VCE = 1 V

BC 337/16; BC 338/16

BC 337/25; BC 338/25

BC 337/40; BC 338/40

IC = 300 mA; VCE = 1 V

BC 337/16; BC 338/16

BC 337/25; BC 338/25

BC 337/40; BC 338/40

hFE

100

160

250

60

100

170

160

250

350

–

250

400

630

–

V

Collector-emitter breakdown voltage

IC = 10 mA

BC 337

BC 338

V(BR)CE0

45

25

–

nA

µA

Collector cutoff current

VCB = 25 V

BC 338

VCB = 45 V

BC 337

VCB = 25 V, TA = 150 ˚C

BC 338

VCB = 45 V, TA = 150 ˚C

BC 337

ICB0

–

100

10

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BC 337

BC 338

V(BR)CB0

50

30

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VCEsat

–

0.7

Base-emitter saturation voltage

IC = 500 mA; IB = 50 mA

VBEsat

––2

nA

Emitter cutoff current

VEB = 4 V

IEB0

–

100

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

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Q62702-C314-V3 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Q62702-C314-V3 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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