Electronic Components Datasheet Search |
|
V40150C Datasheet(PDF) 1 Page - Vishay Siliconix |
|
V40150C Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89250 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A V40150C, VI40150C Vishay General Semiconductor New Product FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 150 V IFSM 160 A VF at IF = 20 A 0.75 V TJ max. 150 °C TO-220AB 1 2 3 1 K 2 3 TO-262AA PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 CASE PIN 3 TMBS ® V40150C VI40150C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40150C VI40150C UNIT Maximum repetitive peak reverse voltage VRRM 150 V Maximum average forward rectified current (fig. 1) per device IF(AV) 40 A per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 160 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
Similar Part No. - V40150C_11 |
|
Similar Description - V40150C_11 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |