Q62702-C2327 datasheet(2/5 Pages) SIEMENS

Part #	Q62702-C2327

Description	PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

Dec-19-1996

BC 807-16W

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC 807 W

IC = 10 mA, IB = 0 , BC 808 W

V(BR)CEO

25

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IB = 0 , BC 807 W

IC = 10 µA, IB = 0 , BC 808 W

V(BR)CBO

30

50

-

Base-emitter breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector-base cutoff current

VCB = 25 V, TA = 25 °C

VCB = 25 V, TA = 150 °C

ICBO

-

50

100

nA

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain

IC = 100 mA, VCE = 1 V, BC ... 16 W

IC = 100 mA, VCE = 1 V, BC ... 25 W

IC = 100 mA, VCE = 1 V, BC ... 40 W

IC = 300 mA, VCE = 1 V, BC ... 16 W

IC = 300 mA, VCE = 1 V, BC ... 25 W

IC = 300 mA, VCE = 1 V, BC ... 40 W

hFE

170

100

60

250

160

100

-

350

250

160

-

630

400

250

-

Collector-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VBEsat

-

1.2

1) Pulse test: t < 300

µs; D < 2%

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Q62702-C2327 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Q62702-C2327 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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