VESD05A8B-HNH datasheet(3/7 Pages) VISHAY

Part #	VESD05A8B-HNH

Description	8-Line ESD-Protection Diode Array in LLP1713-9L

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Manufacturer	VISHAY [Vishay Siliconix]

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VESD05A8B-HNH

Document Number 81741

Rev. 1.2, 11-Jun-10

Vishay Semiconductors

www.vishay.com

3

For technical support, please contact: ESDProtection@vishay.com

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VESD05A8B-HNH

BiAs mode: each input (pin 1 - pin 8) to ground (pin 9)

If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the

VESD05A8B-HNH can also be used in parallel in order to "multiply" the performance.

If two diodes are switched in parallel you get



double surge power = double peak pulse current (2 x IPPM)



half of the line inductance = reduced clamping voltage



half of the line resistance = reduced clamping voltage



double line Capacitance (2 x CD)



double Reverse leakage current (2 x IR)

Parameter

Test conditions/remarks

Symbol

Min.

Typ.

Max.

Unit

Protection paths

Number of line which can be protected

N lines

8

lines

Reverse current

at IR = 0.5 µA

VRWM

5V

Max. reverse current

at VR = VRWM = 5 V

IR

0.5

µA

Min. reverse breakdown

voltage

at IR = 1 mA

VBR

68

V

Max. clamping voltage

at IPP = 4 A acc. IEC 61000-4-5

VC

13

V

Max. forward clamping

voltage

at IF = 4 A acc. IEC 61000-4-5

VF

4.5

V

Line capacitance

at VR = 0 V; f = 1 MHz

CD

20

23

pF

at VR = 2.5 V; f = 1 MHz

CD

12

14

pF

L1

L4

L2

L3

20525

1

2

3

4

8

7

6

5

9

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VESD05A8B-HNH Datasheet(PDF) 3 Page - Vishay Siliconix

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