VF40150C-M3-4W datasheet(2/4 Pages) VISHAY

Part #	VF40150C-M3-4W

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions within your region, please contact one of the following:

Document Number: 89271

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 10-Nov-10

VF40150C

Vishay General Semiconductor

New Product

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Dissipation Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 5 A

TA = 25 °C

VF (1)

0.69

-

V

IF = 10 A

0.84

-

IF = 20 A

1.15

1.43

IF = 5 A

TA = 125 °C

0.55

-

IF = 10 A

0.64

-

IF = 20 A

0.75

0.82

Reverse current per diode

VR = 100 V

TA = 25 °C

IR (2)

2.0

-

μA

TA = 125 °C

2.5

-

mA

VR = 150 V

TA = 25 °C

-

250

μA

TA = 125 °C

5

25

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VF40150C

UNIT

Typical thermal resistance per diode

RθJC

4.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ITO-220AB

VF40150C-M3/4W

1.75

4W

50/tube

Tube

Case Temperature (°C)

50

30

0

25

50

75

100

125

150

175

Resistive or Inductive Load

Mounted on Specific Heatsink

20

10

40

0

2

6

20

02

8

12

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

6

4

12

10

4

16

8

20

16

24

18

10

14

18

14

22

D = t

p/T

t

p

T

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