VSB2200S

Vishay General Semiconductor

Document Number: 89142

Revision: 29-Sep-10

For technical questions within your region, please contact one of the following:

www.vishay.com

1

New Product

High-Voltage Trench MOS Barrier Schottky Rectifier

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters or polarity protection application.

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free

according

to

IEC

61249-2-21

definition

MECHANICAL DATA

Case: DO-204AL (DO-41)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

Note

PRIMARY CHARACTERISTICS

2.0 A

200 V

40 A

0.65 V

150 °C

DO-204AL (DO-41)

TMBS

®

PARAMETER

SYMBOL

VSB2200S

UNIT

Maximum repetitive peak reverse voltage

200

V

2.0

A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

40

A

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 40 to + 150

°C