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VSKL300-08PBF Datasheet(PDF) 3 Page - Vishay Siliconix |
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VSKL300-08PBF Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 94557 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 04-May-10 3 VSKL300-08PbF INT-A-PAK Power Module Thyristor/Diode, 300 A Vishay High Power Products Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum required DC gate voltage to trigger VGT TJ = 25 °C Anode supply: 12 V resistive load 3V Maximum required DC gate current to trigger IGT 200 mA Maximum holding current IH 600 Maximum peak positive gate voltage +VGM TJ = TJ maximum, tp ≤ 5 ms 20 V Maximum peak negative gate voltage -VGM 5.0 DC gate voltage not to trigger VGD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 0.30 V DC gate current not to trigger IGD 10 mA Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 1000 A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 to 140 °C Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.19 K/W Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased 0.035 Mounting torque ± 10 % IAP to heatsink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm busbar to IAP Approximate weight 500 g 17.8 oz. Case style INT-A-PAK ΔR CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° VSKL300 0.019 0.022 0.028 0.041 0.068 0.013 0.023 0.031 0.043 0.069 K/W |
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