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Document Number: 94629

6

Revision: 17-May-10

VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series

Vishay Semiconductors

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 27 A

Fig. 10 - On-State Voltage Drop Characteristics

Fig. 12 - Gate Characteristics

Instantaneous on-state voltage (V)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

1

10

100

1000

Tj = 25°C

Tj = 125°C

Per leg

Square wave pulse duration (s)

0.001

0.01

0.1

1

10

0.01

0.1

1

10

Steady state value

RthJC = 0.76 °C/W

(DC operation)

Per leg

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

(b )

(a)

Rect ang ular g ate p ulse

(4) (3)

(2) (1)

(1) PGM = 100 W, tp = 500 µs

(2) PGM = 50 W, tp = 1 ms

(3) PGM = 20 W, tp = 25 ms

(4) PGM = 10 W, tp = 5 ms

a )Recommended load line for

b)Recommended load line for

VGD

IGD

Frequenc y Limited by PG(AV)

rated di/ d t: 20 V, 30 ohms

tr = 0.5 µs, tp >= 6 µs

<= 30% rated di/dt: 20 V, 65 ohms

tr = 1 µs, tp >= 6 µs

IRK.26.. Series

Instantaneous gate current (A)

VSK.