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VSKT26 Datasheet(PDF) 6 Page - Vishay Siliconix |
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VSKT26 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 9 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94629 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-May-10 VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics Fig. 12 - Gate Characteristics Instantaneous on-state voltage (V) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 1 10 100 1000 Tj = 25°C Tj = 125°C Per leg Square wave pulse duration (s) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 Steady state value RthJC = 0.76 °C/W (DC operation) Per leg 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b ) (a) Rect ang ular g ate p ulse (4) (3) (2) (1) (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms a )Recommended load line for b)Recommended load line for VGD IGD Frequenc y Limited by PG(AV) rated di/ d t: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs <= 30% rated di/dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs IRK.26.. Series Instantaneous gate current (A) VSK. |
Similar Part No. - VSKT26_10 |
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Similar Description - VSKT26_10 |
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