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Document Number: 93053

6

Revision: 02-Jul-10

VSK.230..PbF Series

Vishay Semiconductors

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

Fig. 10 - On-State Voltage Drop Characteristics

Fig. 11 - Reverse Recovery Charge Characteristics

Fig. 12 - Gate Characteristics

200

400

600

800

1000

1200

1400

1600

1800

0

102030405060 708090 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

I

500 A

300 A

200 A

100 A

VSK.

230.. Series

T

Per Junction

50 A

0.1

1

10

100

0.001

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(2)

(3)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

rated di/dt : 20 V, 10 ohms; tr < =1µs

tr<=1 µs

Rectangular gate pulse

<=30% rated di/dt : 10V, 20ohms

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

VSK.230 Series

Frequency Limited by PG(AV)

(1)

(4)

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

100

Square Wave Pulse Duration (s)

Steady State Value:

R

= 0.125 K/W

(DC Operation)

thJC

VSK.230.. Series