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VSKT170-10 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VSKT170-10 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 12 page  www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94417 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 130 °C MAXIMUM mA VSK.170- 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 VSK.250- 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 60 20 2000 2100 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 170 250 A 85 85 °C Maximum RMS on-state current IT(RMS) As AC switch 377 555 A Maximum peak, one-cycle on-state non-repetitive, surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 5100 8500 t = 8.3 ms 5350 8900 t = 10 ms 100 % VRRM reapplied 4300 7150 t = 8.3 ms 4500 7500 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 131 361 kA2s t = 8.3 ms 119 330 t = 10 ms 100 % VRRM reapplied 92.5 255 t = 8.3 ms 84.4 233 Maximum I2 t for fusing I2 t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2 s Low level value or threshold voltage VT(TO)1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.89 0.97 V High level value of threshold voltage VT(TO)2 (I > x I T(AV) < I < x IT(AV)), TJ = TJ maximum 1.12 1.00 Low level value on-state slope resistance rt1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 1.34 0.60 m High level value on-state slope resistance rt2 (I > x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.96 0.57 Maximum on-state voltage drop VTM ITM = x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.44 V Maximum holding current IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500 mA Maximum latching current IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 1000 |
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