VSKT250-10PBF datasheet(3/12 Pages) VISHAY

Part #	VSKT250-10PBF

Description	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

3 / 12 page

Document Number: 94417

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 02-Jul-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

3

VSK.170PbF, VSK.250PbF Series

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A/250 A

Vishay Semiconductors

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.170

VSK.250

UNITS

Typical delay time

td

TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs

Vd = 0.67 % VDRM

1.0

μs

Typical rise time

tr

2.0

Typical turn-off time

tq

ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;

VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 

50 to 150

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.170

VSK.250

UNITS

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = TJ maximum

50

60

mA

RMS insulation voltage

VINS

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s

3000

V

Critical rate of rise of off-state voltage

dV/dt

TJ = TJ maximum, exponential to 67 % rated VDRM

1000

V/μs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.170

VSK.250

UNITS

Maximum peak gate power

PGM

tp  5 ms, TJ = TJ maximum

10.0

W

Maximum average gate power

PG(AV)

f = 50 Hz, TJ = TJ maximum

2.0

Maximum peak gate current

+ IGM

tp  5 ms, TJ = TJ maximum

3.0

A

Maximum peak negative gate voltage

- VGT

tp  5 ms, TJ = TJ maximum

5.0

V

Maximum required DC gate voltage to trigger

VGT

TJ = - 40 °C

Anode supply = 12 V,

resistive load; Ra = 1



4.0

TJ = 25 °C

3.0

TJ = TJ maximum

2.0

Maximum required DC gate current to trigger

IGT

TJ = - 40 °C

Anode supply = 12 V,

resistive load; Ra = 1



350

mA

TJ = 25 °C

200

TJ = TJ maximum

100

Maximum gate voltage that will not trigger

VGD

TJ = TJ maximum, rated VDRM applied

0.25

V

Maximum gate current that willnot trigger

IGD

TJ = TJ maximum, rated VDRM applied

10.0

mA

Maximum rate of rise of turned-on current

dI/dt

TJ = TJ maximum, ITM = 400 A,

rated VDRM applied

500

A/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.170

VSK.250

UNITS

Junction operating and storage

temperature range

TJ, TStg

- 40 to 130

°C

Maximum thermal resistance,

junction to case per junction

RthJC

DC operation

0.17

0.125

K/W

Typical thermal resistance,

case to heatsink per module

RthCS

Mounting surface flat, smooth and greased

0.02

Mounting torque ± 10 %

MAP to heatsink

A mounting compound is recommended

and the torque should be rechecked after

a period of about 3 hours to allow for the

spread of the compound.

4 to 6

Nm

busbar to MAP

Approximate weight

500

g

17.8

oz.

Case style

MAGN-A-PAK

Similar Part No. - VSKT250-10PBF

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VSKT25016PBF	245Kb / 11P	SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A Revision: 22-Apr-08

More results

Similar Description - VSKT250-10PBF

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VS-VSK.170PBF	273Kb / 12P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A 01-Jan-2023
	VS-VSK170PBF	274Kb / 12P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A 01-Jan-2022
	IRKT250-14	313Kb / 12P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A Revision: 02-Jul-10
	VSK170PBF	245Kb / 11P	SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A Revision: 22-Apr-08
International Rectifier	IRK	150Kb / 6P	SCR / SCR and SCR / DIODE MAGN-A-pak Power Modules
Vishay Siliconix	VS-VSK230PBF	170Kb / 9P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A 01-Jan-2022
	VSKT230	345Kb / 8P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A Revision: 02-Jul-10
	VS-VSK.230PBF	186Kb / 9P	SCR / SCR and SCR / Diode (MAGN-A-PAK Power Modules), 230 A Revision: 27-Apr-17
	VS-VSK.230..PBF	168Kb / 9P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A 01-Jan-2022
	VS-VSK.230..PBF	169Kb / 9P	SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A 01-Jan-2023

More results

VSKT250-10PBF Datasheet(PDF) 3 Page - Vishay Siliconix

VSKT250-10PBF Datasheet(HTML) 3 Page - Vishay Siliconix

Similar Part No. - VSKT250-10PBF

Similar Description - VSKT250-10PBF

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL