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VSKN105-12 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VSKN105-12 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94628 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-May-10 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A ELECTRICAL SPECIFICATIONS Notes (1) I2t for time tx = I2 √t x √tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x π x IAV < I < π x IAV (4) I > π x IAV VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM, IDRM AT 130 °C mA VSK.105 04 400 500 400 20 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current (thyristors) IT(AV) 180° conduction, half sine wave, TC = 85 °C 105 A Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch IO(RMS) 235 Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 2000 t = 8.3 ms 2094 t = 10 ms 100 % VRRM reapplied 1682 t = 8.3 ms 1760 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied Initial TJ = TJ maximum 20 kA2s t = 8.3 ms 18.26 t = 10 ms 100 % VRRM reapplied 14.14 t = 8.3 ms 12.91 Maximum I2 √t for fusing I2 √t (1) t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum 200 kA2 √s Maximum value or threshold voltage VT(TO) (2) Low level (3) TJ = TJ maximum 0.98 V High level (4) 1.12 Maximum value of on-state slope resistance rt (2) Low level (3) TJ = TJ maximum 2.7 m Ω High level (4) 2.34 Maximum peak on-state or forward voltage VTM ITM = π x IT(AV) TJ = 25 °C 1.8 V VFM IFM = π x IF(AV) Maximum non-repetitive rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 250 mA Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 or I (RMS) I (RMS) |
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